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<datestamp>2018-01-11</datestamp>
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<publisher>HAL CCSD</publisher>
<title lang=en>Structural, Optical and Thermo-physical Properties of Mesoporous Silicon Layers: Influence of Substrate Characteristics</title>
<creator>Melhem, Amer</creator>
<creator>De Sousa Meneses, Domingos</creator>
<creator>Andreazza-Vignolle, Caroline</creator>
<creator>Defforge, Thomas</creator>
<creator>Gautier, Gael</creator>
<creator>Sauldubois, Audrey</creator>
<creator>Semmar, Nadjib</creator>
<contributor>Groupe de recherches sur l'énergétique des milieux ionisés (GREMI) ; Université d'Orléans (UO) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI) ; Université d'Orléans (UO) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Centre de Recherche sur la Matière Divisée (CRMD) ; Université d'Orléans (UO) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Groupe de Recherche en Matériaux, Microélectronique, Acoustique et Nanotechnologies (GREMAN - UMR 7347) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA) - Université François Rabelais - Tours - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Centre Commun de Caractérisation des Matériaux des Antilles et de la Guyane (C3MAG) ; Université des Antilles et de la Guyane (UAG)</contributor>
<description>International audience</description>
<source>The Journal of Physical Chemistry C</source>
<publisher>ACS American Chemical Society - Publications</publisher>
<identifier>hal-01495490</identifier>
<identifier>https://hal.archives-ouvertes.fr/hal-01495490</identifier>
<source>https://hal.archives-ouvertes.fr/hal-01495490</source>
<source>The Journal of Physical Chemistry C, ACS American Chemical Society - Publications, 2017, 〈10.1021/acs.jpcc.6b13101〉</source>
<identifier>DOI : 10.1021/acs.jpcc.6b13101</identifier>
<relation>info:eu-repo/semantics/altIdentifier/doi/10.1021/acs.jpcc.6b13101</relation>
<language>en</language>
<subject lang=en>themophysics</subject>
<subject lang=en> mesoporous</subject>
<subject lang=en> silicon</subject>
<subject lang=en> photo thermal</subject>
<subject lang=en> FTIR spectroscopy</subject>
<subject lang=en> transmission electron microscopy</subject>
<subject>[SPI.GPROC] Engineering Sciences [physics]/Chemical and Process Engineering</subject>
<subject>[CHIM] Chemical Sciences</subject>
<subject>[SPI] Engineering Sciences [physics]</subject>
<subject>[PHYS] Physics [physics]</subject>
<type>info:eu-repo/semantics/article</type>
<type>Journal articles</type>
<description lang=en>ABSTRACT: In this paper, the structural, optical and thermal properties of n-type (100),p-type (100) and (111) mesoporous silicon (MePSi) are reported. The mesoporous silicon wasprepared by an electrochemical process from bulk silicon wafer. Depending on the etchingdepth, analyses show that the porosity of p-type (111) increased by 32 to 40% compared to p(100) which, in turn, increased by 22 to 48% compared to n-type (100). The structuremorphology and the abundance of Si-Ox and Si-Hy also depended heavily on the type andcrystal orientation of MePSi. The thermal properties of the MePSi layers such as thermalconductivity (κ), volumetric heat capacity (ρCp) and thermal contact resistance (Rth) weredetermined using the pulsed photothermal method. The thermal conductivity of bulk silicondropped sharply after etching, decreasing by more than twenty-fold in the case of n-type (100)and by over forty-five fold for p-type (100) and (111). According to the percolation modeldepending on both porosity and phonon confinement, the drop in thermal conductivity wasmainly due to the nanostructure formation after etching. Thermal investigations showed thatthe volumetric heat capacity (ρCp) followed the barycentric model which depends mainly onthe porosity. The thermal contact resistances of MePSi layers were estimated to be in therange of 1x10-8 to 1x10-7 K⋅m2⋅W-1.</description>
<date>2017-03-23</date>
</dc>
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