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<OAI-PMH schemaLocation=http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd> <responseDate>2018-01-17T12:15:42Z</responseDate> <request identifier=oai:HAL:hal-01685831v1 verb=GetRecord metadataPrefix=oai_dc>http://api.archives-ouvertes.fr/oai/hal/</request> <GetRecord> <record> <header> <identifier>oai:HAL:hal-01685831v1</identifier> <datestamp>2018-01-16</datestamp> <setSpec>type:ART</setSpec> <setSpec>subject:phys</setSpec> <setSpec>subject:spi</setSpec> <setSpec>collection:UNIV-AG</setSpec> </header> <metadata><dc> <publisher>HAL CCSD</publisher> <title lang=en>Stability of ion‐implanted layers on MgO under ultrasonic cavitation</title> <creator>Rankin, J.</creator> <creator>Brewster, J. R.</creator> <creator>Boatner, L. A.</creator> <creator>Williams, A. M.</creator> <creator>Romana, Laurence</creator> <contributor>Groupe de Technologie des Surfaces et Interfaces (GTSI) ; Université des Antilles et de la Guyane (UAG) - Université des Antilles (Pôle Guadeloupe) ; Université des Antilles (UA) - Université des Antilles (UA)</contributor> <description>International audience</description> <source>ISSN: 0021-8979</source> <source>EISSN: 1089-7550</source> <source>Journal of Applied Physics</source> <publisher>American Institute of Physics</publisher> <identifier>hal-01685831</identifier> <identifier>https://hal.univ-antilles.fr/hal-01685831</identifier> <source>https://hal.univ-antilles.fr/hal-01685831</source> <source>Journal of Applied Physics, American Institute of Physics, 1996, 80 (5), pp.2781 - 2787. 〈10.1063/1.363195〉</source> <identifier>DOI : 10.1063/1.363195</identifier> <relation>info:eu-repo/semantics/altIdentifier/doi/10.1063/1.363195</relation> <language>en</language> <subject>[PHYS] Physics [physics]</subject> <subject>[SPI] Engineering Sciences [physics]</subject> <type>info:eu-repo/semantics/article</type> <type>Journal articles</type> <date>1996-09</date> </dc> </metadata> </record> </GetRecord> </OAI-PMH>