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<datestamp>2018-01-11</datestamp>
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<publisher>HAL CCSD</publisher>
<title lang=en>Tools for modeling radioactive contaminants in chip materials</title>
<creator>Wrobel, F.</creator>
<creator>Kaouache, A.</creator>
<creator>Saigné, F.</creator>
<creator>Touboul, A. d.</creator>
<creator>Schrimpf, R. d.</creator>
<creator>Warot, G.</creator>
<creator>BRUGUIER, Olivier</creator>
<contributor>Institut d’Electronique et des Systèmes (IES) ; Université de Montpellier (UM) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Vanderbilt University, Nashville,</contributor>
<contributor>Laboratoire Souterrain de Modane (LSM - UMR 6417) ; Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3) - Commissariat à l'énergie atomique et aux énergies alternatives (CEA) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Géosciences Montpellier ; Université des Antilles et de la Guyane (UAG) - Institut national des sciences de l'Univers (INSU - CNRS) - Université de Montpellier (UM) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<contributor>Dynamique de la Lithosphere ; Géosciences Montpellier ; Université des Antilles et de la Guyane (UAG) - Institut national des sciences de l'Univers (INSU - CNRS) - Université de Montpellier (UM) - Centre National de la Recherche Scientifique (CNRS) - Université des Antilles et de la Guyane (UAG) - Institut national des sciences de l'Univers (INSU - CNRS) - Université de Montpellier (UM) - Centre National de la Recherche Scientifique (CNRS)</contributor>
<source>ISSN: 0268-1242</source>
<source>EISSN: 1361-6641</source>
<source>Semiconductor Science and Technology</source>
<publisher>IOP Publishing</publisher>
<identifier>hal-01504448</identifier>
<identifier>https://hal.archives-ouvertes.fr/hal-01504448</identifier>
<source>https://hal.archives-ouvertes.fr/hal-01504448</source>
<source>Semiconductor Science and Technology, IOP Publishing, 2017, 32 (3), pp.034001. 〈10.1088/1361-6641/aa5479〉</source>
<identifier>DOI : 10.1088/1361-6641/aa5479</identifier>
<relation>info:eu-repo/semantics/altIdentifier/doi/10.1088/1361-6641/aa5479</relation>
<language>en</language>
<subject lang=en>SER</subject>
<subject lang=en>specific activity</subject>
<subject lang=en>alpha pollutants</subject>
<subject lang=en>radioactive contaminants</subject>
<subject lang=en>radionuclide</subject>
<subject lang=en>uranium</subject>
<subject>[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]</subject>
<type>info:eu-repo/semantics/article</type>
<type>Journal articles</type>
<description lang=en>Radioactive pollutants are naturally present in microelectronic device materials and can be an issue for the reliability of devices. The main concern is alpha emitters that produce high-energy particles (a few MeV) that ionize the semiconductor and then trigger soft errors. The question is to know what kinds of radionuclides are present in the device, their location in the device and the abundance of each species. In this paper we describe tools that are required to address the issue of radioactive pollutants in electronic devices.</description>
<date>2017-03</date>
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