untitled
<OAI-PMH schemaLocation=http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd>
<responseDate>2018-01-17T12:15:52Z</responseDate>
<request identifier=oai:HAL:hal-01685790v1 verb=GetRecord metadataPrefix=oai_dc>http://api.archives-ouvertes.fr/oai/hal/</request>
<GetRecord>
<record>
<header>
<identifier>oai:HAL:hal-01685790v1</identifier>
<datestamp>2018-01-16</datestamp>
<setSpec>type:ART</setSpec>
<setSpec>subject:spi</setSpec>
<setSpec>subject:phys</setSpec>
<setSpec>collection:UNIV-AG</setSpec>
</header>
<metadata><dc>
<publisher>HAL CCSD</publisher>
<title lang=en>Influence of tin ion implantation on the damage and annealing kinetics of sapphire</title>
<creator>McHargue, Carl</creator>
<creator>Romana, Laurence</creator>
<contributor>Groupe de Technologie des Surfaces et Interfaces (GTSI) ; Université des Antilles et de la Guyane (UAG) - Université des Antilles (Pôle Guadeloupe) ; Université des Antilles (UA) - Université des Antilles (UA)</contributor>
<description>International audience</description>
<source>ISSN: 0168-583X</source>
<source>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</source>
<publisher>Elsevier</publisher>
<identifier>hal-01685790</identifier>
<identifier>https://hal.univ-antilles.fr/hal-01685790</identifier>
<source>https://hal.univ-antilles.fr/hal-01685790</source>
<source>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2000, 166-167, pp.193 - 197. 〈10.1016/S0168-583X(99)00654-0〉</source>
<identifier>DOI : 10.1016/S0168-583X(99)00654-0</identifier>
<relation>info:eu-repo/semantics/altIdentifier/doi/10.1016/S0168-583X(99)00654-0</relation>
<language>en</language>
<subject>[SPI] Engineering Sciences [physics]</subject>
<subject>[PHYS] Physics [physics]</subject>
<type>info:eu-repo/semantics/article</type>
<type>Journal articles</type>
<date>2000-05</date>
</dc>
</metadata>
</record>
</GetRecord>
</OAI-PMH>
